Experimental and Modeling Study of Metal-Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices
Milano, Gianluca (Istituto Nazionale di Ricerca Metrologica)
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Fretto, Matteo (INRiM (Istituto Nazionale di Ricerca Metrologica))
Valov, Ilia (Peter-Grünberg-Institut)
Ricciardi, Carlo (Politecnico di Torino)

Fecha:	2022
Resumen:	Memristive devices relying on redox-based resistive switching mechanisms represent promising candidates for the development of novel computing paradigms beyond von Neumann architecture. Recent advancements in understanding physicochemical phenomena underlying resistive switching have shed new light on the importance of an appropriate selection of material properties required to optimize the performance of devices. However, despite great attention has been devoted to unveiling the role of doping concentration, impurity type, adsorbed moisture, and catalytic activity at the interfaces, specific studies concerning the effect of the counter electrode in regulating the electronic flow in memristive cells are scarce. In this work, the influence of the metal-insulator Schottky interfaces in electrochemical metallization memory (ECM) memristive cell model systems based on single-crystalline ZnO nanowires (NWs) is investigated following a combined experimental and modeling approach. By comparing and simulating the electrical characteristics of single NW devices with different contact configurations and by considering Ag and Pt electrodes as representative of electrochemically active and inert electrodes, respectively, we highlight the importance of an appropriate choice of electrode materials by taking into account the Schottky barrier height and interface chemistry at the metal-insulator interfaces. In particular, we show that a clever choice of metal-insulator interfaces allows to reshape the hysteretic conduction characteristics of the device and to increase the device performance by tuning its resistance window. These results obtained from single NW-based devices provide new insights into the selection criteria for materials and interfaces in connection with the design of advanced ECM cells.
Derechos:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Materia:	Metal−insulator interfaces ; Memristive devices ; Resistive switching ; Nanowires ; Schottky barriers
Publicado en:	ACS applied materials & interfaces, Vol. 14, Num. 47 (November 2022) , p. 53027-53037, ISSN 1944-8252

DOI: 10.1021/acsami.2c11022
PMID: 36396122

11 p, 4.5 MB

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