Dual-Gate Organic Thin-Film Transistor and Multiplexer Chips for the Next Generation of Flexible EG-ISFET Sensor Chips
Rezaee, Ashkan (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics)
Carrabina Bordoll, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics)

Date:	2023
Abstract:	Ion-sensitive field-effect transistors (ISFETs) are used as elementary devices to build many types of chemical sensors and biosensors. Organic thin-film transistor (OTFT) ISFETs use either small molecules or polymers as semiconductors together with an additive manufacturing process of much lower cost than standard silicon sensors and have the additional advantage of being environmentally friendly. OTFT ISFETs' drawbacks include limited sensitivity and higher variability. In this paper, we propose a novel design technique for integrating extended-gate OTFT ISFETs (OTFT EG-ISFETs) together with dual-gate OTFT multiplexers (MUXs) made in the same process. The achieved results show that our OTFT ISFET sensors are of the state of the art of the literature. Our microsystem architecture enables switching between the different ISFETs implemented in the chip. In the case of sensors with the same gain, we have a fault-tolerant architecture since we are able to replace the faulty sensor with a fault-free one on the chip. For a chip including sensors with different gains, an external processor can select the sensor with the required sensitivity.
Grants:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-01623
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	OTFT ; EG-ISFET ; Multiplexer ; Dual-gate OTFT ; Electrostatic discharge
Published in:	Sensors (Basel, Switzerland), Vol. 23, Num. 14 (July 2023) , art. 6577, ISSN 1424-8220

DOI: 10.3390/s23146577
PMID: 37514871

22 p, 5.1 MB

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