Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model
Salvador Aguilera, Emili (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona)
Campabadal, Francesca (Institut de Microelectrònica de Barcelona)
Martin-Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rodriguez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2023
Abstract:	Variability of the conduction characteristics of filamentary-type resistive switching devices or resistive RAMs (RRAMs) is a hot research topic both in academia and industry because it is currently considered one of the major showstoppers for the successful development and application of this technology. In this work, we thoroughly investigate the statistics of the cycle-to-cycle (C2C) variability observed in the experimental current-voltage (I-V) curves of HfO-based memristive structures using the fitdistrplus package for the R language. This exploratory analysis allows us to identify which parametric probability distributions are the most suitable candidates for describing our data. This study involves graphical tools such as the density, skewness-kurtosis (S-K), and quantile-quantile (Q-Q) plots. The analysis is completed with the aid of goodness-of-fit statistics (Kolmogorov-Smirnov, Cramer-von Mises, Anderson-Darling) and criteria (Akaike's and Bayesian). The selected distributions are incorporated into the SPICE script of the quasi-static memdiode model for resistive switching devices and used for simulating uncorrelated C2C variability. Finally, a one-way sensitivity analysis is carried out in order to test the impact of the model parameters variation in the output characteristics of the device.
Grants:	Agencia Estatal de Investigación PID2019-103869RB-C32 Agència de Gestió d'Ajuts Universitaris i de Recerca 2020/FISDU-00261
Note:	Altres ajuts: acords transformatius de la UAB
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Memristor ; Variability ; Resistive switching ; HfO2
Published in:	Solid-state electronics, Vol. 206 (August 2023) , art. 108667, ISSN 1879-2405

DOI: 10.1016/j.sse.2023.108667

10 p, 8.6 MB

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