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Large-Area Synthesis of Ferromagnetic Fe5−xGeTe2/Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature
Lv, Hua (Leibniz-Institut im Forschungsverbund Berlin e.V)
da Silva, Alessandra (Leibniz-Institut im Forschungsverbund Berlin e.V)
Figueroa García, Adriana Isabel (Institut Català de Nanociència i Nanotecnologia)
Guillemard, Charles (ALBA Laboratori de Llum de Sincrotró)
Fernández Aguirre, Iván (Institut Català de Nanociència i Nanotecnologia)
Camosi, Lorenzo (Institut Català de Nanociència i Nanotecnologia)
Aballe, Lucía (ALBA Laboratori de Llum de Sincrotró)
Valvidares, Manuel (ALBA Laboratori de Llum de Sincrotró)
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
Schubert, Jürgen (Jülich-Aachen Research Alliance)
Schmidbauer, Martin (Leibniz-Institut für Kristallzüchtung)
Herfort, Jens (Leibniz-Institut im Forschungsverbund Berlin e.V)
Hanke, Michael (Leibniz-Institut im Forschungsverbund Berlin e.V)
Trampert, Achim (Leibniz-Institut im Forschungsverbund Berlin e.V)
Engel-Herbert, Roman (Leibniz-Institut im Forschungsverbund Berlin e.V)
Ramsteiner, Manfred (Leibniz-Institut im Forschungsverbund Berlin e.V)
Lopes, Joao Marcelo Jordao (Leibniz-Institut im Forschungsverbund Berlin e.V)

Date: 2023
Abstract: Van der Waals (vdW) heterostructures combining layered ferromagnets and other 2D crystals are promising building blocks for the realization of ultracompact devices with integrated magnetic, electronic, and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing for realizing highly uniform heterostructures with well-defined interfaces between different 2D-layered materials. It is also required that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, it is demonstrated that the large-area growth of Fe GeTe/graphene heterostructures is achieved by vdW epitaxy of Fe GeTe on epitaxial graphene. Structural characterization confirms the realization of a continuous vdW heterostructure film with a sharp interface between Fe GeTe and graphene. Magnetic and transport studies reveal that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond nonscalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications.
Grants: European Commission 713673
Ministerio de Ciencia e Innovación CEX2021-001214-S
Agencia Estatal de Investigación PID2019-111773RB-I00
European Commission 881603
"la Caixa" Foundation LCF/BQ/DI18/11660030
Rights: Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. Creative Commons
Language: Anglès
Document: Article ; recerca ; Versió publicada
Published in: Small, Vol. 19, Issue 39 (September 2023) , art. 2302387, ISSN 1613-6829

DOI: 10.1002/smll.202302387


10 p, 2.3 MB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > The ALBA Synchrotron
Articles > Research articles
Articles > Published articles

 Record created 2023-10-11, last modified 2023-11-01



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