Quantum size effects in hafnium-oxide resistive switching - Search Results

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Quantum size effects in hafnium-oxide resistive switching / Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lian, Xiaojuan (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cagli, Carlo (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Perniola, Luca (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Liu, Ming (Chinese Academy of Sciences. Laboratory of Nanofabrication and Novel Device Integration (Beijing, Xina)) ; American Physical Society
Discrete changes of conductance of the order of G0 = 2e2/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. [...]
2013 - DOI (Digital Object Identifier)

10.1063/1.4802265
Applied physics letters, Vol. 102, Issue 18 (May 2013) , p. 183505/1-183505/4

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