Quantum size effects in hafnium-oxide resistive switching
Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Lian, Xiaojuan (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Cagli, Carlo (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França))
Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Perniola, Luca (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França))
Liu, Ming (Chinese Academy of Sciences. Laboratory of Nanofabrication and Novel Device Integration (Beijing, Xina))
American Physical Society

Date:	2013
Abstract:	Discrete changes of conductance of the order of G0 = 2e2/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single- to few-atom diameters behave as QWs and are capable of carrying current with G0 conductance.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Vacancies ; Quantum wells ; Hopping transport ; Electrodes ; Transport properties ; Electrical properties
Published in:	Applied physics letters, Vol. 102, Issue 18 (May 2013) , p. 183505/1-183505/4, ISSN 1077-3118

DOI: 10.1063/1.4802265

5 p, 1.1 MB

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