Index of artpub/2011/138450/

Crespo-Yepes, Albert
Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric
2011
https://ddd.uab.cat/record/138450
[ICO]NameLast modifiedSizeDescription

[PARENTDIR]Parent Directory  -  
[   ]1=Crespo-Yepes,_Albert2022-06-29 13:26 21  
[   ]2=Injected_charge_to_recovery_as_a_parameter...2022-06-29 13:26 123  
[   ]3=20112022-06-29 13:26 5  
[   ]4=1384502022-06-29 13:26 34  
[TXT]138450.dirinfo2024-10-02 05:09 318  
[   ]138450.du2024-10-02 05:09 49  
[TXT]138450.dupdirs2024-10-02 05:09 0  
[TXT]138450.dupfiles2024-10-02 05:09 0  
[TXT]138450.errors2024-10-02 05:09 0  
[TXT]138450.md52024-10-02 05:09 65  
[TXT]138450.sha12024-10-02 05:09 73  
[TXT]138450.sha2562024-10-02 05:09 97  
[TXT]138450.stats2024-10-02 05:09 248  
[IMG]tradevmat_a2011m3v11n1p126.gif2015-10-28 17:20 21K 
[IMG]tradevmat_a2011m3v11n1p126.ico2015-10-28 17:20 12K 
[TXT]tradevmat_a2011m3v11n1p126.info2015-10-28 17:20 1.9K 
[   ]tradevmat_a2011m3v11n1p126.pdf2015-10-28 17:20 2.0M 
[TXT]tradevmat_a2011m3v11n1p126.txt2015-10-28 17:20 38K