Index of tesis/2025/hdl_10803_695519/

Valdivieso León, Carlos-andrés
Characterization of degradation induced by BTI, HCI, and OFF-State Stress, and of the Resistive Switching phenomenon in FD-SOI Ω-Gate NW-FET devices. Analysis of aging relaxation in ring oscillator circuits fabricated in 28 nm technology
2025
https://ddd.uab.cat/record/321436
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