Mesoscopic approach to progressive breakdown in ultrathin SiO2 layers
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Date:	2007
Abstract:	The opening of a breakdown path across the ultrathin oxide layer in a metal-oxide-semiconductor structure caused by the application of electrical stress can be analyzed within the framework of the physics of mesoscopic conductors. Using the Landauer formula for a quantum point contact, the author is able to show that the saturation of the gate leakage current is linked to the progressive evolution of the constriction's conductance toward the ballistic transport regime. The possible physical mechanisms responsible for energy dissipation inside the breakdown path as well as the limitations of the proposed approach are discussed.
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Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Tunneling ; Ballistic transport ; Conductors ; Electrical breakdown ; Electrical properties ; Electrodes ; Inelastic scattering ; Leakage currents ; Metal insulator semiconductor structures ; Numerical modeling
Published in:	Applied physics letters, Vol. 91, Issue 5 (July 2007) , p. 053502/1-053502/3, ISSN 1077-3118

DOI: 10.1063/1.2761831

4 p, 286.6 KB

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