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Predictive model for scanned probe oxidation kinetics
Dagata, J. A. (National Institute of Standards and Technology (Gaithersburg, Estats Units d'Amèrica))
Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Morimoto, K. (Matsushita Electrical Industrial (Osaka, Japó))
Inoue, T. (Electrotechnical Laboratory (Tsukuba, Japó))
Itoh, J. (Electrotechnical Laboratory (Tsukuba, Japó))
Yokoyama, H. (Electrotechnical Laboratory (Tsukuba, Japó))
American Physical Society

Fecha: 2000
Resumen: Previous descriptions of scanned probe oxidation kinetics involved implicit assumptions that one-dimensional, steady-state models apply for arbitrary values of applied voltage and pulse duration. These assumptions have led to inconsistent interpretations regarding the fundamental processes that contribute to control of oxide growth rate. We propose a model that includes a temporal crossover of the system from transient to steady-state growth and a spatial crossover from predominantly vertical to coupled lateral growth. The model provides an excellent fit of available experimental data.
Derechos: Tots els drets reservats.
Lengua: Anglès.
Documento: article ; recerca ; publishedVersion
Materia: Oxidation ; Process monitoring and control ; Spatial analysis
Publicado en: Applied Physics Letters, Vol. 76, Issue 19 (March 2000) , p. 2710-2712, ISSN 1077-3118

DOI: 10.1063/1.126451

4 p, 392.4 KB

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