Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2 /graphene/ h -BN heterostructures
Zihlmann, Simon (Universität Basel. Department of Physics)
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia)
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia)
Kedves, Máté (Budapesti Müszaki és Gazdaságtudományi Egyetem.Department of Physics)
Watanabe, Kenji (National Institute for Material Science (Tsukuba, Japan))
Taniguchi, Takashi (National Institute for Material Science (Tsukuba, Japan))
Schönenberger, Christian (Universität Basel. Department of Physics)
Makk, Péter (Universität Basel. Department of Physics)

Fecha:	2018
Resumen:	Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition-metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit coupling and its relaxation mechanism remained unknown. We show an increased spin-orbit coupling close to the charge neutrality point in graphene, where topological states are expected to appear. Single-layer graphene encapsulated between the transition-metal dichalcogenide WSe2 and h-BN is found to exhibit exceptional quality with mobilities as high as 1×105 cm2 V-1 s-1. At the same time clear weak antilocalization indicates strong spin-orbit coupling, and a large spin relaxation anisotropy due to the presence of a dominating symmetric spin-orbit coupling is found. Doping-dependent measurements show that the spin relaxation of the in-plane spins is largely dominated by a valley-Zeeman spin-orbit coupling and that the intrinsic spin-orbit coupling plays a minor role in spin relaxation. The strong spin-valley coupling opens new possibilities in exploring spin and valley degree of freedom in graphene with the realization of new concepts in spin manipulation.
Ayudas:	European Commission 696656 Ministerio de Economía y Competitividad SEV-2013-0295
Derechos:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió acceptada per publicar
Publicado en:	Physical review B, Vol. 97, issue 7 (Feb. 2018) , p. 75434, ISSN 2469-9969

DOI: 10.1103/PhysRevB.97.075434

Postprint 12 p, 1.1 MB

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Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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