Web of Science: 25 citas, Scopus: 26 citas, Google Scholar: citas,
Mechanical tuning of LaAIO₃ SrTiO₃ interface conductivity
Sharma, P. (University of Nebraska–Lincoln. Department of Physics and Astronomy)
Ryu, S. (University of Wisconsin-Madison. Department of Materials Science and Engineering)
Burton, J.D. (University of Nebraska–Lincoln. Department of Physics and Astronomy)
Paudel, T.R. (University of Nebraska–Lincoln. Department of Physics and Astronomy)
Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering)
Huang, Z. (National University of Singapore. Nanoscience and Nanotechnology Institute)
Ariando, None (National University of Singapore. Nanoscience and Nanotechnology Institute)
Tsymbal, E.Y. (University of Nebraska–Lincoln. Department of Physics and Astronomy)
Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Eom, C.B. (Department of Materials Science and Engineering, University of Wisconsin-Madison)
Gruverman, A. (University of Nebraska–Lincoln. Department of Physics and Astronomy)

Fecha: 2015
Resumen: In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. The highly conductive state at the interface between insulators LaAIO₃ and SrTiO₃ is a prime example of such emergent functionality, with potential application in high electron density transistors. In this report, we demonstrate a new paradigm for voltage-free tuning of LaAIO₃ SrTiO₃ (LAO/STO) interface conductivity, which involves the mechanical gating of interface conductance through stress exerted by the tip of a scanning probe microscope. The mechanical control of channel conductivity and the long retention time of the induced resistance states enable transistor functionality with zero gate voltage.
Nota: The work at University of WisconsinMadison was supported by NSF Grant DMR-1234096 and AFOSR grant FA9550-12-1-0342. G.C. acknowledges financial support from a European Research Council (ERC) Starting Grant and the Severo Ochoa programme.
Derechos: Tots els drets reservats.
Lengua: Anglès.
Documento: article ; recerca ; acceptedVersion
Materia: 2D electron gas ; Complex oxides ; Heterointerfaces ; Memristors ; Resistive switching
Publicado en: Nano letters, Vol. 15, issue 5 (May 2015) , p. 3547-3551, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.5b01021


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El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados

 Registro creado el 2018-12-19, última modificación el 2019-03-28



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