visitante ::
identificación
|
|||||||||||||||
Buscar | Enviar | Ayuda | Servicio de Bibliotecas | Sobre el DDD | Català English Español |
Página principal > Artículos > Artículos publicados > Effect of cs-incorporated NiOx on the performance of perovskite solar cells |
Fecha: | 2017 |
Resumen: | The effect of Cs-incorporated NiO on perovskite solar cells with an inverted structure was investigated, where NiO and PCBM were used as selective contacts for holes and electrons, respectively. It was found that the generation of an Ni phase in an NiO layer was significantly suppressed by employing cesium. Furthermore, Cs-incorporated NiO enabled holes to be efficiently separated at the interface, showing the improved photoluminescent quenching and thus generating higher short-circuit current. The effect of Cs incorporation was also prominent in the inhibition of recombination. The recombination resistance of Cs-incorporated NiO was noticeably increased by more than three-fold near the maximum power point leading to a higher fill factor of 0. 78 and consequently a higher power conversion efficiency of 17. 2% for the device employing Cs-incorporated NiO. |
Ayudas: | European Commission 604391 Ministerio de Economía y Competitividad SEV-2013-0295 Ministerio de Economía y Competitividad ENE2016-79282-C5-2-R Ministerio de Economía y Competitividad CTQ2016-81911-REDT Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1212 |
Nota: | This is an open access article published under an ACS AuthorChoice License. See Standard ACS AuthorChoice/Editors' Choice Usage Agreement - https://pubs.acs.org/page/policy/authorchoice_termsofuse.html |
Derechos: | Tots els drets reservats. |
Lengua: | Anglès |
Documento: | Article ; recerca ; Versió publicada |
Publicado en: | ACS omega, Vol. 2, Issue 12 (December 2017) , p. 9074-9079, ISSN 2470-1343 |
6 p, 987.3 KB |