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Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching
Otte Ortiz, Marinus Albertus (Institut Català de Nanociència i Nanotecnologia)
Solís Tinoco, Verónica Iraís (Institut Català de Nanociència i Nanotecnologia)
Prieto, Pilar (Instituto de Microelectrónica de Madrid)
Borrisé Nogué, Xavier (Institut Català de Nanociència i Nanotecnologia)
Lechuga, Laura M. (Institut Català de Nanociència i Nanotecnologia)
González, M.U. (Instituto de Microelectrónica de Madrid)
Sepúlveda Martínez, Borja (Institut Català de Nanociència i Nanotecnologia)

Fecha: 2015
Resumen: In current top-down nanofabrication methodologies the design freedom is generally constrained to the two lateral dimensions, and is only limited by the resolution of the employed nanolithographic technique. However, nanostructure height, which relies on certain mask-dependent material deposition or etching techniques, is usually uniform, and on-chip variation of this parameter is difficult and generally limited to very simple patterns. Herein, a novel nanofabrication methodology is presented, which enables the generation of high aspect-ratio nanostructure arrays with height gradients in arbitrary directions by a single and fast etching process. Based on metal-assisted chemical etching using a catalytic gold layer perforated with nanoholes, it is demonstrated how nanostructure arrays with directional height gradients can be accurately tailored by: (i) the control of the mass transport through the nanohole array, (ii) the mechanical properties of the perforated metal layer, and (iii) the conductive coupling to the surrounding gold film to accelerate the local electrochemical etching process. The proposed technique, enabling 20-fold on-chip variation of nanostructure height in a spatial range of a few micrometers, offers a new tool for the creation of novel types of nano-assemblies and metamaterials with interesting technological applications in fields such as nanophotonics, nanophononics, microfluidics or biomechanics. Based on metal-assisted chemical etching using a catalytic gold layer perforated with nanoholes, it is demonstrated how high aspect-ratio nanostructure arrays with directional height gradients can be accurately tailored by: i) control of mass transport through the nanohole array, ii) mechanical properties of the perforated metal layer, and iii) conductive coupling to the surrounding gold film to accelerate the local electrochemical etching process. The proposed technique, enabling 20-­‐fold on-­‐chip variation of nanostructure height in a spatial range of a few microns, offers a new tool for the creation of novel types of nano-­‐assemblies and metamaterials with interesting technological applications in fields such as nanophotonics, nanophononics, microfluidics or biomechanics.
Nota: Número d'acord de subvenció MINECO/MAT2011-12645-­E
Nota: Número d'acord de subvenció MINECO/TEC2012-­34280
Nota: Número d'acord de subvenció MINECO/MAT2011-29194-C02-­01
Nota: Número d'acord de subvenció MINECO/MAT2013-48628-­R
Nota: Número d'acord de subvenció MINECO/SEV-­2013-­0295
Derechos: Tots els drets reservats.
Lengua: Anglès.
Documento: article ; recerca ; acceptedVersion
Materia: Nanofabrication ; Height gradients ; High aspect-­ratio vertical nanowires ; Metal assisted chemical etching ; Metamaterials
Publicado en: Small, Vol. 11, Issue 33 (September 2015) , p. 4201-4208, ISSN 1613-6829

DOI: 10.1002/smll.201500175


Postprint
32 p, 5.3 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados

 Registro creado el 2019-09-23, última modificación el 2019-11-04



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