Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga₂O₃
Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics)
Sartel, Corinne (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Kabouche, R. (Centre national de la recherche scientifique (França). Institut d'Electronique, de Microélectronique et de Nanotechnologie)
Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Rubio, Carles (Institut Català de Nanociència i Nanotecnologia)
Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Medjdoub, Farid (Centre national de la recherche scientifique (França). Institut d'Electronique, de Microélectronique et de Nanotechnologie)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Dumont, Yves. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)

Date:	2020
Abstract:	Which the actual critical electrical field of the ultra-wide bandgap semiconductor β-Ga₂O₃ is? Even that it is usual to find in the literature a given value for the critical field of wide and ultra-wide semiconductors such as SiC (3 MV/cm), GaN (3. 3 MV/cm), β-Ga₂O₃ (~8 MV/cm) and diamond (10 MV/cm), this value actually depends on intrinsic and extrinsic factors such as the bandgap energy, material residual impurities or introduced dopants. Indeed, it is well known from 1950's that reducing the residual doping (N) of the semiconductor layer increases the breakdown voltage capability of a semiconductor media (e. g. as N by using the Fulop's approximation for an abrupt junction). A key limitation is, therefore, the residual donor/acceptor concentration generally found in these materials. Here, we report that doping with amphoteric Zinc a p-type β-Ga₂O₃ thin films shortens free carrier mean free path (0. 37 nm), resulting in the ultra-high critical electrical field of 13. 2 MV/cm. Therefore, the critical breakdown field can be, at least, four times larger for the emerging Ga₂O₃ power semiconductor as compared to SiC and GaN. We further explain these wide-reaching experimental facts by using theoretical approaches based on the impact ionization microscopic theory and thermodynamic calculations.
Grants:	Ministerio de Economía y Competitividad SEV-2017-0706 Ministerio de Economía y Competitividad ENE2015-74275-JIN
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Subject:	Ultra-wide band gap ; MOCVD growth ; P type β-Ga₂O₃ ; Electrical properties ; Critical electrical field
Published in:	Materials today physics, Vol. 15 (Dec. 2020) , art. 100263, ISSN 2542-5293

DOI: 10.1016/j.mtphys.2020.100263

Preprint 19 p, 775.1 KB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
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