Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam
Katagiri, Yuri (Aoyama Gakuin University. Department of Electrical Engineering and Electronics)
Nakamura, Taketomo (University of Tokyo. Institute for Solid State Physics)
Ishii, Akihiko (Aoyama Gakuin University. Department of Chemistry and Biological Science)
Ohata, Chika (Aoyama Gakuin University. Department of Electrical Engineering and Electronics)
Hasegawa, Masaki (Aoyama Gakuin University. Department of Chemistry and Biological Science)
Katsumoto, Shingo (University of Tokyo. Institute for Solid State Physics)
Cusati, Teresa (Università di Pisa. Dipartimento di Ingegneria dell'Informazione)
Fortunelli, Alessandro (Istituto di Chimica dei Composti Organometallici (Pisa, Itàlia))
Iannaccone, Giuseppe (Università di Pisa. Dipartimento di Ingegneria dell'Informazione)
Fiori, Gianluca (Università di Pisa. Dipartimento di Ingegneria dell'Informazione)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Haruyama, Junji (Aoyama Gakuin University. Department of Electrical Engineering and Electronics)

Date:	2016
Abstract:	Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS Schottky barrier (SB) junction with barrier height of 0. 13-0. 18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.
Grants:	European Commission 604391 Ministerio de Economía y Competitividad SEV-2013-0295
Rights:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Language:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Subject:	Atomically thin layers ; Schottky junction ; Semiconductor-metal transition ; Electron-beam irradiation ; 1T phase
Published in:	Nano letters, Vol. 16, issue 6 (June 2016) , p. 3788-3794, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.6b01186

Preprint 9 p, 494.7 KB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles