Low-voltage magnetoelectric coupling in Fe0.5Rh0.5/0.68PbMg1/3Nb2/3O3-0.32PbTiO3 thin-film heterostructures
Zhao, Wenbo (University of California. Department of Materials Science and Engineering)
Kim, Jieun (University of California. Department of Materials Science and Engineering)
Huang, Xiaoxi (University of California. Department of Materials Science and Engineering)
Zhang, Lei (University of California. Department of Materials Science and Engineering)
Pesquera, David (Institut Català de Nanociència i Nanotecnologia)
Velarde, Gabriel A. P. (University of California. Department of Materials Science and Engineering)
Gosavi, Tanay (Intel Corporation)
Lin, Chia-Ching (Intel Corporation)
Nikonov, Dmitri E. (Intel Corporation)
Li, Hai (Intel Corporation)
Young, Ian A. (Intel Corporation)
Ramesh, Ramamoorthy (University of California. Department of Physics)
Martin, Lane W. (Lawrence Berkeley National Laboratory. Materials Sciences Division)

Fecha:	2021
Resumen:	The rapid development of computing applications demands novel low-energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low-voltage control of magnetism in 30 nm FeRh/100 nm 0. 68PbMgNbO-0. 32PbTiO (PMN-PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain-induced changes in the FeRh mediated by voltages applied to the PMN-PT. We describe approaches to achieve high-quality, epitaxial growth of FeRh on the PMN-PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin-film devices via studies of the anomalous Hall effect. By comparing the spin-flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10 s m at 325 K while applying a -0. 75 V bias.
Ayudas:	European Commission 79712
Derechos:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió sotmesa a revisió
Materia:	Anomalous Hall effect ; Magnetoelectric coupling ; Multiferroic heterostructures ; Nonvolatile ; Piezo-strain effect
Publicado en:	Advanced functional materials, Vol. 31, issue 40 (Oct. 2021) , art. 2105068, ISSN 1616-3028

DOI: 10.1002/adfm.202105068

Preprint 26 p, 689.9 KB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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