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Página principal > Artículos > Artículos publicados > Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs-AlxGa1−xAs |
Fecha: | 1976 |
Resumen: | Heterojunctions GaAs-AlxGa1-xAs involved in the elaboration of IR laser diodes have been studied. The difference in lattice parameter between the GaAs substrate and the aluminum-substituted epitaxic layer AlxGa1-xAs has been measured accurately on a double-crystal spectrometer for a series of compositions. These data coupled with radius of curvature determination have permitted calculation of the stress in the layer and the bulk lattice parameter of AlxGa1-xAs. Characterization of the defects introduced during the liquid-phase epitaxy has been performed by X-ray topography. |
Derechos: | Tots els drets reservats. |
Lengua: | Anglès |
Documento: | Article ; Versió publicada |
Materia: | Cristal·lografia ; Crystallography |
Publicado en: | Acta crystallographica.Section A, Foundations of crystallography, Vol. 32, Issue. 4 (July 1976) , p. 627-632, ISSN 1600-5724 |
6 p, 1.3 MB |