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Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model
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Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model
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Salvador Aguilera, Emili
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
;
Bargallo Gonzalez, Mireia
(Institut de Microelectrònica de Barcelona) ;
Campabadal, Francesca
(Institut de Microelectrònica de Barcelona) ;
Martin-Martinez, Javier
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodriguez, Rosana
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
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