Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions
Zatko, Victor (Université Paris-Saclay)
Galceran, Regina (Institut Català de Nanociència i Nanotecnologia)
Galbiati, Marta (Université Paris-Saclay)
Peiro, Julian (Université Paris-Saclay)
Godel, Florian (Université Paris-Saclay)
Kern, Lisa-Marie (Université Paris-Saclay)
Perconte, David (Université Paris-Saclay)
Ibrahim, Fatima (Université Grenoble Alpes)
Hallal, Ali (Université Grenoble Alpes)
Chshiev, Mairbek (Institut Universitaire de France)
Martínez, Benjamín (Institut de Ciència de Materials de Barcelona)
Frontera, Carlos (Institut de Ciència de Materials de Barcelona)
Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona)
Kidambi, Piran R. (Vanderbilt University)
Robertson, John (University of Cambridge)
Hofmann, Stephan (University of Cambridge)
Collin, Sophie (Université Paris-Saclay)
Petroff, Frédéric (Université Paris-Saclay)
Martin, Marie-Blandine (Université Paris-Saclay)
Dlubak, Bruno (Université Paris-Saclay)
Seneor, Pierre (Université Paris-Saclay)

Date:	2023
Abstract:	2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. We explore the possibility to create an artificial spin polarized electrode from graphene through proximity interaction with a ferromagnetic insulator to be used in a magnetic tunnel junction (MTJ). Ferromagnetic insulator/graphene artificial electrodes were fabricated and integrated in MTJs based on spin analyzers. Evidence of the emergence of spin polarization in proximitized graphene layers was observed through the occurrence of tunnel magnetoresistance. We deduced a spin dependent splitting of graphene's Dirac band structure (∼15 meV) induced by the proximity effect, potentially leading to full spin polarization and opening the way to gating. The extracted spin signals illustrate the potential of 2D quantum materials based on proximity effects to craft spintronics functionalities, from vertical MTJs memory cells to logic circuits.
Grants:	Ministerio de Ciencia e Innovación PID2021-128410OB-I00 European Commission 607904 Ministerio de Ciencia e Innovación CEX2019-000917-S European Commission 881603
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Proximity effects ; 2D materials ; Graphene ; Spin polarization
Published in:	Nano letters, Vol. 23, Issue 1 (January 2023) , p. 34-41, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.2c03113
PMID: 36535029

8 p, 3.0 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles