| Home > Articles > Published articles > Device-to-Materials Pathway for Electron Traps Detection in Amorphous GeSe-Based Selectors |
| Date: | 2023 |
| Abstract: | The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material-to-device multiscale technique, a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide is proposed. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. The metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material-device codesign and the optimization of novel technologies. |
| Grants: | European Commission 953167 European Commission 814487 Agencia Estatal de Investigación PGC2018-096955-B-C43 European Commission 754558 |
| Rights: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
| Language: | Anglès |
| Document: | Article ; recerca ; Versió publicada |
| Published in: | Advanced Electronic Materials, Vol. 9, Issue 4 (April 2023) , art. 2201224, ISSN 2199-160X |
12 p, 1.6 MB |