Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles
Urquiza, Laura (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2020
Abstract:	We have studied the finite bias transport properties of a 2H-1T' MoS2 lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our results indicate that (a) despite the fundamentally different electrostatics of line and planar dipoles, the Schottky barrier heights respond similarly to changes in doping and applied bias in 2D and 3D M-S junctions, (b) 2H-1T' MoS2 lateral junctions are free from Fermi level pinning, (c) armchair interfaces have superior contacting properties vs. zigzag interfaces, (d) 1T' contacts to p channels will present a reduced contact resistance by a factor of 4-10 with respect to n channels and (e) contacts to intermediately doped n (p) channels operate in the field (thermionic) emission regime. We also provide an improved procedure to experimentally determine the emission regime in 2D material junctions.
Grants:	Ministerio de Economía y Competitividad TEC2015-67462-C2-1-R Agencia Estatal de Investigación RTI2018-097876-B-C21 European Commission 785219 European Commission 881603
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Contact resistance ; DFT ; Lateral 2H-1T' junction ; MoS2 ; NEGF ; Schottky barrier
Published in:	2D materials, Vol. 7, Issue 4 (September 2020) , art. 045030, ISSN 2053-1583

DOI: 10.1088/2053-1583/aba449

Postprint 20 p, 3.7 MB

The record appears in these collections:
Articles > Research articles
Articles > Published articles