Room-Temperature Solid-State Nitrogen-Based Magneto-Ionics in CoxMn1−xN Films
López-Pintó, Nicolau (Universitat Autònoma de Barcelona. Departament de Física)
Jensen, Christopher J. (NIST Center for Neutron Research)
Chen, Zhijie (Georgetown University. Physics Department.)
Tan, Zhengwei (Universitat Autònoma de Barcelona. Departament de Física)
Ma, Zheng (Universitat Autònoma de Barcelona. Departament de Física)
Liedke, Maciej Oskar (Helmholtz-Zentrum Dresden. Institute of Radiation Physics)
Butterling, Maik (Helmholtz-Zentrum Dresden. Institute of Radiation Physics)
Wagner, Andreas (Helmholtz-Zentrum Dresden. Institute of Radiation Physics)
Herrero-Martín, Javier (ALBA Laboratori de Llum de Sincrotró)
Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física)
Nogués, Josep (Institut Català de Nanociència i Nanotecnologia)
Liu, Kai (Georgetown University. Physics Department)
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)

Date:	2024
Abstract:	The increasing energy demand in information technologies requires novel low-power procedures to store and process data. Magnetic materials, central to these technologies, are usually controlled through magnetic fields or spin-polarized currents that are prone to the Joule heating effect. Magneto-ionics is a unique energy-efficient strategy to control magnetism that can induce large non-volatile modulation of magnetization, coercivity and other properties through voltage-driven ionic motion. Recent studies have shown promising magneto-ionic effects using nitrogen ions. However, either liquid electrolytes or prior annealing procedures are necessary to induce the desired N-ion motion. In this work, magneto-ionic effects are voltage-triggered at room temperature in solid state systems of CoMn N films, without the need of thermal annealing. Upon gating, a rearrangement of nitrogen ions in the layers is observed, leading to changes in the co-existing ferromagnetic and antiferromagnetic phases, which result in substantial increase of magnetization at room temperature and modulation of the exchange bias effect at low temperatures. A detailed correlation between the structural and magnetic evolution of the system upon voltage actuation is provided. The obtained results offer promising new avenues for the utilization of nitride compounds in energy-efficient spintronic and other memory devices.
Grants:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00651 Agencia Estatal de Investigación CNS2022-135230 Agencia Estatal de Investigación PDC2021-121276-C31 European Commission 101054687 Agencia Estatal de Investigación PID2020-116844RB-C21 Agencia Estatal de Investigación CEX2021-001214-S
Note:	Altres ajuts: acords transformatius de la UAB
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Published in:	Advanced functional materials, (May 2024) , art. 2404487, ISSN 1616-3028

DOI: 10.1002/adfm.202404487

11 p, 4.1 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > The ALBA Synchrotron
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Articles > Published articles