Control of Ge island coalescence for the formation of nanowires on silicon
Ramanandan, Santhanu Panikar (Ecole Polytechnique Fédérale de Lausanne)
Reñé Sapera, Joel (Ecole Polytechnique Fédérale de Lausanne)
Morelle, Alban (ETH Zurich)
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia)
Rudra, Alok (Ecole Polytechnique Fédérale de Lausanne)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Dubrovskii, Vladimir G. (St. Petersburg State University)
Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)

Date:	2024
Abstract:	Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become a reality, it is essential to understand and control the initial stages of the epitaxy process. In this work, we highlight the importance of surface treatment in the reactor prior to growth to achieve high crystal quality and connected Ge nanowire structures. In particular, we demonstrate that exposure to AsH during the high-temperature treatment enhances lateral growth of initial Ge islands and promotes faster formation of continuous Ge nanowires in trenches. The Kolmogorov-Johnson-Mehl-Avrami crystallization model supports our explanation of Ge coalescence. These results provide critical insight into the selective epitaxy of horizontal Ge nanowires on lattice-mismatched Si substrates, which can be translated to other material systems.
Grants:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00457
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Building blockes ; Device design ; Direct integration ; Ge island ; Germanium nanowires ; Hole spin ; Quanta computers ; Selective area epitaxy ; Silicon chip ; Spin qubit
Published in:	Nanoscale horizons, Vol. 9, Issue 4 (April 2024) , p. 555-565, ISSN 2055-6764

DOI: 10.1039/d3nh00573a
PMID: 38353654

12 p, 4.9 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles