Scale-Dependent Growth Modes of Selective Area Grown III-V Nanowires
Beznasyuk, Daria V. (Technical University of Denmark. Department of Energy Conversion and Storage)
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia)
Nagda, Gunjan (University of Copenhagen. Niels Bohr Institute)
Carrad, Damon J (Technical University of Denmark. Department of Energy Conversion and Storage)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Sand Jespersen, Thomas (Technical University of Denmark. Department of Energy Conversion and Storage)

Date:	2024
Abstract:	Due to their flexible geometry, in-plane selective area grown (SAG) nanowires (NWs) encompass the advantages of vapor-liquid-solid NWs and planar structures. The complex interplay of growth kinetics and NW dimensions provides new pathways for crystal engineering; however, their growth mechanisms remain poorly understood. We analyze the growth mechanisms of GaAs(Sb) and InGaAs/GaAs(Sb) in-plane SAG NWs using molecular beam epitaxy (MBE). While GaAs(Sb) NWs consistently follow a layer-by-layer growth, the InGaAs/GaAs(Sb) growth transitions from step-flow to layer-by-layer and layer-plus-island depending on the InGaAs thickness and the NW dimensions. We extract the diffusion lengths of Ga adatoms along the [11̅0] and [110] directions under As during GaAs(Sb) growth. Our results indicate that Sb may inhibit the layer-by-layer to step-flow transition. Our findings show that different growth modes can be achieved in the MBE of in-plane SAG NWs grown on the same substrate and highlight the importance of the interplay with NW dimensions.
Grants:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00457 Agencia Estatal de Investigación CEX2021-001214-S
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Language:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Subject:	Selective area growth ; Molecular beam epitaxy ; Growth modes ; GaAs(Sb) ; InGaAs ; Diffusion length
Published in:	Nano letters, Vol. 24, Issue 45 (November 2024) , p. 14198-14205, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.4c03283

Preprint 10 p, 17.8 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles