Non-quasi-static effects in graphene field-effect transistors under high-frequency operation
Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Fecha:	2020
Resumen:	We investigate the non-quasi-static (NQS) effects in graphene field-effect transistors (GFETs), which are relevant for the device operation at high frequencies as a result of significant carrier inertia. A small-signal NQS model is derived from the analytical solution of drift-diffusion equation coupled with the continuity equation, which can be expressed in terms of modified Bessel functions of the first kind. The NQS model can be conveniently simplified to provide an equivalent circuit of lumped elements ready to be used in standard circuit simulators. Taking into account only first-order NQS effects, accurate GFET-based circuit simulations up to several times the cutoff frequency (fT) can be performed. Notably, it reduces to the quasi-static (QS) approach when the operation frequency is below ~fT/4. To validate the NQS model, we have compared its outcome against simulations based on a multisegment approach consisting of breaking down the channel length in N equal segments described by the QS model each one.
Ayudas:	European Commission 785219 European Commission 881603 Agencia Estatal de Investigación RTI2018-097876-B-C21
Nota:	Altres ajuts: project 001-P-0011702-GraphCAT
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Lengua:	Anglès
Documento:	Article ; recerca ; Versió acceptada per publicar
Materia:	Field-effect transistor (FET) ; Graphene ; High frequency (HF) ; Non-quasi-static (NQS) ; Radio-frequency (RF) performance
Publicado en:	IEEE Transactions on Electron Devices, Vol. 67, Issue 5 (May 2020) , p. 2188-2196, ISSN 0018-9383

DOI: 10.1109/TED.2020.2982840

Postprint 32 p, 1.6 MB

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