Impact of the Ti/HfO2 Thickness Ratio on the Resistive Switching Characteristics of Memristive Devices
Saludes Tapia, Maria Mercedes (Institut de Microelectrònica de Barcelona)
Campabadal, Francesca (Institut de Microelectrònica de Barcelona)
Miranda, E. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona)

Imprint:	Institute of Electrical and Electronics Engineers, 2025
Abstract:	This work investigates the impact of the Ti thickness on the resistive switching behavior of Ti/HfO-based memristors, with particular focus on the Ti-to-HfO thickness ratio (t/t). Understanding the interplay between the Ti layer and the switching dynamics of the devices is crucial for enhancing their performance and opening up new opportunities for advanced applications. This paper provides a comprehensive analysis of how a modification of the (t/t) ratio affects the Resistive Switching characteristics of the devices. The reported results allow us to identify the optimal conditions required to achieve enhanced memristor functionality, which is essential for applications such as data storage and neuromorphic computing.
Grants:	Agencia Estatal de Investigación PID2022-139586NB-C41 Agencia Estatal de Investigación PID2022-139586NB-C42 Agencia Estatal de Investigación CR32023-040125 Ministerio de Ciencia e Innovación RYC2020-030150-I Generalitat de Catalunya 2021/SGR-00497
Note:	Altres ajuts: the research was supported by project 20225AT012 (CSIC).
Rights:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Language:	Anglès
Document:	Capítol de llibre ; recerca ; Versió acceptada per publicar
Subject:	HfO2 ; Memristors ; Resistive switching ; Ti capping layer ; VCM
Published in:	15th Spanish Conference on Electron Devices (CDE), Málaga, Spain, 2025 , ISBN 979-8-3315-9618-7, DOI 10.1109/CDE66381.2025

DOI: 10.1109/CDE66381.2025.11038885

Available from: 2027-01-30 Postprint 4 p, 597.3 KB

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