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8 p, 971.0 KB Does carrier velocity saturation help to enhance f in graphene field-effect transistors? / Feijoo, Pedro Carlos (Universitat Autònoma de Barcelona) ; Pasadas, Francisco (Universitat Autònoma de Barcelona) ; Bonmann, Marlene (Chalmers University of Technology) ; Asad, Muhammad (Chalmers University of Technology) ; Yang, Xinxin (Chalmers University of Technology) ; Generalov, Andrey (Aalto University) ; Vorobiev, Andrei (Chalmers University of Technology) ; Banszerus, Luca (RWTH Aachen University) ; Stampfer, Christoph (RWTH Aachen University) ; Otto, Martin (Advanced Microelectronic Center Aachen) ; Neumaier, Daniel (Advanced Microelectronic Center Aachen) ; Stake, Jan (Chalmers University of Technology) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona)
It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get optimal maximum oscillation frequency (f ). This paper investigates whether velocity saturation can help to get better current saturation and if that correlates with enhanced f . [...]
2020 - 10.1039/c9na00733d
Nanoscale advances, Vol. 2, Issue 9 (July 2020) , p. 4179-4186  
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See also: similar author names
1 Otto, M.
7 Otto, Markus
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