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11 p, 2.5 MB Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO RRAM devices / Grossi, Alessandro (Università degli Studi di Ferrara. Dipartimento di Ingegneria) ; Perez, Eduardo (IHP Im Technologiepark) ; Zambelli, Cristian (Università degli Studi di Ferrara. Dipartimento di Ingegneria) ; Olivo, Piero (Università degli Studi di Ferrara. Dipartimento di Ingegneria) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Roelofs, Robin (ASM Kapeldreef) ; Woodruff, Jacob (E University Dr. ASM America) ; Raisanen, Petri (E University Dr. ASM America) ; Li, Wei (E University Dr. ASM America) ; Givens, Michael (E University Dr. ASM America) ; Costina, Ioan (IHP Im Technologiepark) ; Schubert, Markus Andreas (IHP Im Technologiepark) ; Wenger, Christian (Brandenburg Medical School Theodor Fontane)
The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. [...]
2018 - 10.1038/s41598-018-29548-7
Scientific reports, Vol. 8 (July 2018) , art. 11160  
Detailed record - Creative Commons

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1 Schubert, Martin
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