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Resultados globales: 3 registros encontrados en 0.02 segundos.
Artículos, Encontrados 3 registros
Artículos Encontrados 3 registros  
1.
17 p, 2.0 MB Thermal boundary resistance in semiconductors by non-equilibrium thermodynamics / Dettori, Riccardo (University of Cagliari. Department of Physics) ; Melis, Claudio (University of Cagliari. Department of Physics) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia)
We critically address the problem of predicting the thermal boundary resistance at the interface between two semiconductors by atomistic simulations. After reviewing the available models, lattice dynamics calculations and molecular dynamics simulation protocols, we reformulate this problem in the language of non-equilibrium thermodynamics, providing an elegant, robust and valuable theoretical framework for the direct calculation of the thermal boundary resistance through molecular dynamics simulations. [...]
2016 - 10.1080/23746149.2016.1175317
Advances in Physics: X, Vol. 1, Issue 2 (May 2016) , p. 246-261  
Registro completo - Creative Commons
2.
8 p, 743.4 KB Ptsi clustering in silicon probed by transport spectroscopy / Mongillo, Massimo (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Spathis, Panayotis (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Katsaros, Georgios (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; De Franceschi, Silvano (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Gentile, Pascal (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. [...]
2014 - 10.1103/PhysRevX.3.041025
Physical Review, Vol. 3, issue. 4 (Dec. 2014) , art. e041025  
Registro completo - Creative Commons
3.
15 p, 9.5 MB Addressing the Environment Electrostatic Effect on Ballistic Electron Transport in Large Systems : A QM/MM-NEGF Approach / Feliciano, Gustavo T. (Universidade Estadual Paulista (Brasil)) ; Sanz Navarro, Carlos (Institut Català de Nanociència i Nanotecnologia) ; Coutinho-Neto, Mauricio Domingues (Universidade Federal do ABC (Brasil)) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Scheicher, Ralph H. (Uppsala University) ; Reily Rocha, Alexandre (Universidade Estadual Paulista (Brasil))
The effects of the environment in nanoscopic materials can play a crucial role in device design. Particularly in biosensors, where the system is usually embedded in a solution, water and ions have to be taken into consideration in atomistic simulations of electronic transport for a realistic description of the system. [...]
2018 - 10.1021/acs.jpcb.7b03475
Journal of physical chemistry B, Vol. 122, Núm. 2 (January 2018) , p. 485-492  
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