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26 p, 689.9 KB Low-voltage magnetoelectric coupling in Fe0.5Rh0.5/0.68PbMg1/3Nb2/3O3-0.32PbTiO3 thin-film heterostructures / Zhao, Wenbo (University of California. Department of Materials Science and Engineering) ; Kim, Jieun (University of California. Department of Materials Science and Engineering) ; Huang, Xiaoxi (University of California. Department of Materials Science and Engineering) ; Zhang, Lei (University of California. Department of Materials Science and Engineering) ; Pesquera, David (Institut Català de Nanociència i Nanotecnologia) ; Velarde, Gabriel A. P. (University of California. Department of Materials Science and Engineering) ; Gosavi, Tanay (Intel Corporation) ; Lin, Chia-Ching (Intel Corporation) ; Nikonov, Dmitri E. (Intel Corporation) ; Li, Hai (Intel Corporation) ; Young, Ian A. (Intel Corporation) ; Ramesh, Ramamoorthy (University of California. Department of Physics) ; Martin, Lane W. (Lawrence Berkeley National Laboratory. Materials Sciences Division)
The rapid development of computing applications demands novel low-energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. [...]
2021 - 10.1002/adfm.202105068
Advanced functional materials, Vol. 31, issue 40 (Oct. 2021) , art. 2105068  

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