Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Olbrich, A. (Infineon Technologies AG (Munic, Alemanya))
Ebersberger, B. (Infineon Technologies AG (Munic, Alemanya))
American Physical Society

Date:	2001
Abstract:	A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/release of single charges in the defects generated during stress.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Atomic force microscopes ; Atomic force microscopy ; Electrical properties ; Thin films
Published in:	Applied physics letters, Vol. 78, Issue 26 (May 2001) , p. 4181-4183, ISSN 1077-3118

DOI: 10.1063/1.1382624

4 p, 388.4 KB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Engineering > The Reliability of Electron Devices and Circuits group (REDEC)
Articles > Research articles
Articles > Published articles