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4 p, 388.4 KB Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy / Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Olbrich, A. (Infineon Technologies AG (Munic, Alemanya)) ; Ebersberger, B. (Infineon Technologies AG (Munic, Alemanya)) ; American Physical Society
A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈100 nm2). [...]
2001 - 10.1063/1.1382624
Applied physics letters, Vol. 78, Issue 26 (May 2001) , p. 4181-4183  
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