Per citar aquest document: http://ddd.uab.cat/record/116297
Cathodoluminescence and photoluminescence of highly luminescent CdSe/ZnS quantum dot composites
Rodríguez Viejo , Javier (Massachusetts Institute of Technology. Department of Chemical Engineering)
Jensen, K. F. (Massachusetts Institute of Technology. Department of Chemical Engineering)
Mattoussi, H. (Massachusetts Institute of Technology. Department of Materials Science and Engineering)
Michel, J. (Massachusetts Institute of Technology. Department of Materials Science and Engineering)
Dabbousi, B. (Massachusetts Institute of Technology. Department of Chemistry)
Bawendi, M. G. (Massachusetts Institute of Technology. Department of Chemistry)
American Physical Society

Data: 1997
Resum: We report room-temperature cathodoluminescence and photoluminescence spectra originating from ZnS overcoated CdSenanocrystals, 33 and 42 Å in diameter, embedded in a ZnS matrix. The thin-filmquantum dot composites were synthesized by electrospray organometallic chemical vapor deposition. Cathodoluminescence and photoluminescence are dominated by the sharp band-edge emission characteristic of the initial nanocrystals. The emission wavelength can be tuned in a broad window (470–650 nm) by varying the size of the dots. The cathodoluminescence intensity depends on the crystallinity of the ZnS matrix and the voltage and current density applied.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: II-VI semiconductors ; Cathodoluminescence ; Photoluminescence ; Quantum dots ; Nanocrystals ; Current density ; Organometallic chemical vapor deposition ; Thin film composition ; Thin film deposition
Publicat a: Applied Physics Letters, Vol. 70, Num. 16 (April 1997) , p. 2132-2134, ISSN 1077-3118

DOI: 10.1063/1.119043


4 p, 327.1 KB

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