Home > Articles > Published articles > Analysis of set and reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages |
Date: | 2015 |
Abstract: | The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain. Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions. |
Grants: | Ministerio de Economía y Competitividad TEC2013-45638-C3-1-R Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384 |
Note: | Altres ajuts: ERDF/TEC2013-45638-C3-1-R |
Rights: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades. |
Language: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Subject: | Resistive switching random access memory (RRAM) ; Metal-insulator-semiconductor (MIS) ; Fast ramped voltages ; Time domain measurements |
Published in: | Microelectronic engineering, Vol. 147 (Nov. 2015) , p. 176-179, ISSN 0167-9317 |
Post-print 4 p, 1.1 MB |