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Página principal > Artículos > Artículos publicados > Negative bias temperature instabilities induced in device with millisecond anneal for ultra-shallow junctions |
Fecha: | 2014 |
Resumen: | In this paper the NBTI degradation has been studied in pMOS transistors with ultra-thin high-k dielectric subjected to a millisecond anneal for ultra-shallow junction implantation using different laser powers. An ultrafast characterization technique has been developed with the aim of acquiring the threshold voltage (Vth) shift in relaxation times as short as possible once the electrical stress is removed. It has been observed that increasing the millisecond anneal temperature reduce the NBTI degradation. These results have been explained in the context of the emission and capture probability maps of the defects. |
Ayudas: | Ministerio de Economía y Competitividad TEC2010-16126 Ministerio de Economía y Competitividad BES-2011-047449 Agència de Gestió d'Ajuts Universitaris i de Recerca 2009/SGR-783 |
Derechos: | Tots els drets reservats. |
Lengua: | Anglès |
Documento: | Article ; recerca ; Versió acceptada per publicar |
Materia: | MOSFET ; BTI ; Annealing ; Time-dependent variability ; Emission and capture times ; Defect passivation |
Publicado en: | Solid-state electronics, Vol. 101 (Nov. 2014) , p. 131-136, ISSN 1879-2405 |
Post-print 11 p, 617.3 KB |