Large-signal model of graphene field-effect transistors. Part II : circuit performance benchmarking
Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Fecha:	2016
Resumen:	This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. Specifically we have simulated a high-frequency performance amplifier, together with other circuits that take advantage of the ambipolarity of graphene, such as a frequency doubler, a radio-frequency subharmonic mixer and a multiplier phase detector. A variety of simulations comprising DC, transient dynamics, Bode diagram, S-parameters, and power spectrum have been compared with experimental data to assess the validity of the model.
Ayudas:	European Commission 696656 Ministerio de Economía y Competitividad TEC2012-31330 Ministerio de Economía y Competitividad TEC2015-67462-C2-1-R
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió acceptada per publicar
Materia:	Ambipolar electronics ; Compact model ; Field-effect transistor ; Graphene ; Intrinsic capacitance ; Circuit performance benchmarking ; Verilog-A
Publicado en:	IEEE transactions on electron devices, Vol. 63, Issue 7 (July 2016) , p. 2942 - 2947, ISSN 1557-9646

DOI: 10.1109/TED.2016.2563464

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