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Pàgina inicial > Articles > Articles publicats > Toward robust segmented nanowires : |
Data: | 2016 |
Resum: | Segmented nanowires (NWs) have found a wealth of applications due to their multifuctionality, arising from complementarities and synergies among segments of different materials. However, to ensure a practical use of segmented NWs, high quality interfaces between dissimilar segments must be ensured. Herein, tri-segmented CoPt/Cu/Ni NWs and bi-segmented CoPt/Ni magnetic NWs are fabricated by means of template-assisted electrodeposition and the characteristics of their interfaces are investigated in detail. The presence of a Cu segment sandwiched between the CoPt and the Ni segments severely affects the integrity of the whole NW. Namely, Cu deposits in a (200) textured face-centered cubic (fcc) structure, which cannot accommodate well on the c-axis oriented hexagonal close-packed CoPt. Instead, when the Cu segment is absent, well-connected CoPt/Ni NWs with smooth interface are obtained. Unlike the Cu segment, Ni shows the (111) textured fcc structure, which holds good crystallographic matching with the underlying CoPt segment. Magnetic measurements reveal that CoPt/Ni NWs exhibit staircase-like hysteresis loops similar to the tri-segmented CoPt/Cu/Ni NWs. Such loop shape stems from the dissimilar coercivity between the hard (CoPt) and soft (Ni) segments. The bi-segmented NWs (with robust interfaces) are appealing for multi-bit recording media, magnetic nanoelectromechanical systems and magnetically-driven wireless drug delivery nanoplatforms. |
Ajuts: | European Commission 648454 European Commission 296679 Ministerio de Economía y Competitividad RYC-2012-10839 Ministerio de Economía y Competitividad MAT2014-57960-C3-1-R Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1015 |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Matèria: | Segmented nanowires ; Interfaces ; Template-assisted electrodeposition ; Stair-case hysteresis loop ; Electrocrystallization |
Publicat a: | Advanced materials interfaces, Vol. 3, issue 18 (Sep. 2016) , article 1600336, ISSN 2196-7350 |
Post-print 25 p, 1.1 MB |