Growth and luminescence of polytypic InP on epitaxial graphene
Mukherjee, Samik (Polytechnique Montréal. Département de génie physique)
Nateghi, Nima (Polytechnique Montréal. Département de génie physique)
Jacobberger, Robert M. (University of Wisconsin-Madison. Department of Materials Science and Engineering)
Bouthillier, Etienne (Polytechnique Montréal. Département de génie physique)
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Coenen, Toon (DELMIC BV)
Cardinal, Dhan (Université de Montréal. Département de chimie)
Levesque, Pierre (Université de Montréal. Département de chimie)
Desjardins, Patrick (Polytechnique Montréal. Département de génie physique)
Martel, Richard (Université de Montréal. Département de chimie)
Arnold, Michael S. (University of Wisconsin-Madison. Department of Materials Science and Engineering)
Moutanabbir, Oussama (Polytechnique Montréal. Département de génie physique)

Data:	2018
Resum:	Van der Waals epitaxy is an attractive alternative to direct heteroepitaxy where the forced coherency at the interface cannot sustain large differences in lattice parameters and thermal expansion coefficients between the substrate and the epilayer. Herein, the growth of monocrystalline InP on Ge and SiO/Si substrates using graphene as an interfacial layer is demonstrated. Micrometer-sized InP crystals are found to grow with interfaces of high crystalline quality and with different degrees of coalescence depending on the growth conditions. Some InP crystals exhibit a polytypic structure, consisting of alternating zinc-blende and wurtzite phases, forming a type-II homojunction with well (barrier) width of about 10 nm. The optical properties, investigated using room temperature nano-cathodoluminescence, indicate the signatures of the direct optical transitions at 1. 34 eV across the gap of the zinc-blende phase and the indirect transitions at ≈1. 31 eV originating from the alternating zinc-blende and wurtzite phases. Additionally, the InP nanorods, found growing mainly on the graphene/SiO/Si substrate, show optical transition across the gap of the wurtzite phase at ≈1. 42 eV. This demonstration of InP growth on graphene and the correlative study between the structure and optical properties pave the way to develop hybrid structures for potential applications in integrated photonic and optoelectronic devices.
Ajuts:	Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1638 Ministerio de Economía y Competitividad MAT2014-59961-C2-2-R Ministerio de Economía y Competitividad SEV-2013-0295
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Matèria:	Optical emission ; Polytypic crystal phase ; Van der Waals heteroepitaxy
Publicat a:	Advanced functional materials, Vol. 28, issue 8 (Feb. 2018) , art. 1705592, ISSN 1616-3028

DOI: 10.1002/adfm.201705592

Preprint 19 p, 432.5 KB

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