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Pàgina inicial > Articles > Articles publicats > Electron beam lithography for direct patterning of MoS2on PDMS substrates |
Data: | 2021 |
Resum: | Precise patterning of 2D materials into micro- and nanostructures presents a considerable challenge and many efforts are dedicated to the development of processes alternative to the standard lithography. In this work we show a fabrication technique based on direct electron beam lithography (EBL) on MoSon polydimethylsiloxane (PDMS) substrates. This easy and fast method takes advantage of the interaction of the electron beam with the PDMS, which at high enough doses leads to cross-linking and shrinking of the polymer. At the same time, the adhesion of MoSto PDMS is enhanced in the exposed regions. The EBL acceleration voltages and doses are optimized in order to fabricate well-defined microstructures, which can be subsequently transferred to either a flexible or a rigid substrate, to obtain the negative of the exposed image. The reported procedure greatly simplifies the fabrication process and reduces the number of steps compared to standard lithography and etching. As no additional polymer, such as polymethyl methacrylate (PMMA) or photoresists, are used during the whole process the resulting samples are free of residues. |
Ajuts: | European Commission 289061 Ministerio de Economía y Competitividad SEV-2017-0706 Ministerio de Ciencia e Innovación PGC2018-101743-B-I00 Ministerio de Ciencia e Innovación RYC-2017-23758 |
Drets: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió publicada |
Matèria: | Acceleration voltages ; Direct-patterning ; Fabrication process ; Fabrication technique ; Micro and nanostructures ; Polydimethylsiloxane (PDMS) substrates ; Rigid substrates ; Standard lithographies |
Publicat a: | RSC advances, Vol. 11, Issue 32 (2021) , p. 19908-19913, ISSN 2046-2069 |
6 p, 646.5 KB |