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| Pàgina inicial > Articles > Articles publicats > Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures |
(Institut Català de Nanociència i Nanotecnologia) (Institut Català de Nanociència i Nanotecnologia) (Weizmann Institute of Science (Israel). Department of Molecular Chemistry and Materials Science) (Institut Català de Nanociència i Nanotecnologia) (Institut de Ciències Fotòniques) (University of Leeds. School of Chemical and Process Engineering) (Weizmann Institute of Science (Israel). Department of Molecular Chemistry and Materials Science) (Institut Català de Nanociència i Nanotecnologia)
| Data: | 2022 |
| Resum: | Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key role in determining their morphologies, crystal structure and properties. To unveil those mechanisms, we perform atomic-scale aberration-corrected scanning transmission electron microscopy studies on planar core-shell ZnSe@ZnTe nanowires on α-AlO substrates. The core morphology affects the shell structure involving plane bending and the formation of low-angle polar boundaries. The origin of this phenomenon and its consequences on the electronic band structure are discussed. We further use monochromated valence electron energy-loss spectroscopy to obtain spatially resolved band-gap maps of the heterostructure with sub-nanometer spatial resolution. A decrease in band-gap energy at highly strained core-shell interfacial regions is found, along with a switch from direct to indirect band-gap. These findings represent an advance in the sub-nanometer-scale understanding of the interplay between structure and electronic properties associated with highly mismatched semiconductor heterostructures, especially with those related to the planar growth of heterostructured nanowire networks. Planar growth of nanowire arrays involves interactions between materials that affect the electronic behavior of the effective heterojunction. Here, authors show how core curvature and cross-section morphology affect shell growth, demonstrating how strain at the core-shell interface induces electronic band modulations in ZnSe@ZnTe nanowires. |
| Ajuts: | European Commission 789104 European Commission 754510 Ministerio de Ciencia e Innovación PID2020-112625GB-I00 Ministerio de Ciencia e Innovación CEX2019-000910-S Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-327 Agencia Estatal de Investigación SEV-2017-0706 |
| Nota: | Altres ajuts: J.A., S.M.-S., M.B., and M.C.S. are funded by the CERCA Program / Generalitat de Catalunya. |
| Drets: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.  |
| Llengua: | Anglès |
| Document: | Article ; recerca ; Versió publicada |
| Matèria: | Electronic properties and materials ; Nanowires ; Transmission electron microscopy ; Structural properties |
| Publicat a: | Nature communications, Vol. 13 (2022) , art. 4089, ISSN 2041-1723 |
