Thermal rectification and thermal logic gates in graded alloy semiconductors
Ng, Ryan C. (Institut Català de Nanociència i Nanotecnologia)
Castro-Alvarez, Alejandro (Universidad de La Frontera. Centro de Excelencia en Medicina Traslacional (Chile))
Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia)
Date: |
2022 |
Abstract: |
Classical thermal rectification arises from the contact between two dissimilar bulk materials, each with a thermal conductivity (k) with a different temperature dependence. Here, we study thermal rectification in a SiGe alloy with a spatial dependence on the atomic composition. Rectification factors (R = k/k) of up to 3. 41 were found. We also demonstrate the suitability of such an alloy for logic gates using a thermal AND gate as an example by controlling the thermal conductivity profile via the alloy composition. This system is readily extendable to other alloys, since it only depends on the effective thermal conductivity. These thermal devices are inherently advantageous alternatives to their electric counterparts, as they may be able to take advantage of otherwise undesired waste heat in the surroundings. Furthermore, the demonstration of logic operations is a step towards thermal computation. |
Grants: |
European Commission 897148 Agencia Estatal de Investigación PGC2018-101743-B-I00
|
Rights: |
Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
Language: |
Anglès |
Document: |
Article ; recerca ; Versió publicada |
Subject: |
Thermal rectifier ;
Alloy ;
Rectification ;
Logic gate |
Published in: |
Energies, Vol. 15, issue 13 (June 2022) , art. 4685, ISSN 1996-1073 |
DOI: 10.3390/en15134685
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Record created 2022-10-07, last modified 2022-11-05