Two-dimensional materials prospects for non-volatile spintronic memories
Yang, Hyunsoo (National University of Singapore. Department of Electrical and Computer Engineering)
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
Chshiev, Mairbek (SPINtronique et TEchnologie des Composants)
Couet, Sébastien (Imec)
Dieny, Bernard (SPINtronique et TEchnologie des Composants)
Dlubak, Bruno (Unité Mixte de Physique. CNRS. Thales. Université Paris-Saclay)
Fert, Albert (Université Paris-Saclay. Unité Mixte de Physique)
Garello, Kevin (SPINtronique et TEchnologie des Composants)
Jamet, Matthieu (SPINtronique et TEchnologie des Composants)
Jeong, Dae-Eun (Samsung Electronics Co.)
Lee, Kangho (Samsung Electronics Co.)
Lee, Taeyoung (GLOBALFOUNDRIES Singapore Pte. Ltd.)
Martin, Marie-Blandine (Université Paris-Saclay. Unité Mixte de Physique)
Kar, Gouri Sankar (Imec)
Sénéor, Pierre (Université Paris-Saclay. Unité Mixte de Physique)
Shin, Hyeon-Jin (Samsung Advanced Institute of Technology)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)

Fecha:	2022
Resumen:	Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.
Ayudas:	European Commission 899896 European Commission 881603 European Commission 306652 Agencia Estatal de Investigación PID2019-111773RB-I00 Agencia Estatal de Investigación SEV-2017-0706
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió acceptada per publicar
Materia:	Electrical and electronic engineering ; Magnetic devices
Publicado en:	Nature, Vol. 606, issue 7915 (June 2022) , p. 663-673, ISSN 1476-4687

DOI: 10.1038/s41586-022-04768-0

Postprint 39 p, 1.5 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados