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Resultados globales: 9 registros encontrados en 0.02 segundos.
Artículos, Encontrados 9 registros
Artículos Encontrados 9 registros  
1.
9 p, 1.2 MB The elphbolt ab initio solver for the coupled electron-phonon Boltzmann transport equations / Protik, Nakib H. (Institut Català de Nanociència i Nanotecnologia) ; Li, Chunchua (Boston College. Department of Physics) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Broido, David (Boston College. Department of Physics) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
elphbolt is a modern Fortran (2018 standard) code for efficiently solving the coupled electron-phonon Boltzmann transport equations from first principles. Using results from density functional and density functional perturbation theory as inputs, it can calculate the effect of the non-equilibrium phonons on the electronic transport (phonon drag) and non-equilibrium electrons on the phononic transport (electron drag) in a fully self-consistent manner and obeying the constraints mandated by thermodynamics. [...]
2022 - 10.1038/s41524-022-00710-0
npj Computational Materials, Vol. 8 (2022) , art. 28  
Registro completo - Creative Commons
2.
8 p, 1.4 MB Quantifying thermal transport in buried semiconductor nanostructures : Via cross-sectional scanning thermal microscopy / Spièce, Jean (Lancaster University. Physics Department) ; Evangeli, Charalambos (Lancaster University. Physics Department) ; Robson, Alexander J. (Lancaster University. Physics Department) ; Sachat, Alexandros el (Institut Català de Nanociència i Nanotecnologia) ; Haenel, Linda (University of Stuttgart) ; Alonso, M. Isabel (Institut de Ciència de Materials de Barcelona) ; Garriga, Miquel (Institut de Ciència de Materials de Barcelona) ; Robinson, Benjamin James (Lancaster University. Material Science Institute) ; Oehme, Michael (University of Stuttgart) ; Schulze, Jörg (University of Stuttgart) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia (Institució Catalana de Recerca i Estudis Avançats) ; Kolosov, Oleg Victor (Lancaster University. Material Science Institute)
Managing thermal transport in nanostructures became a major challenge in the development of active microelectronic, optoelectronic and thermoelectric devices, stalling the famous Moore's law of clock speed increase of microprocessors for more than a decade. [...]
2021 - 10.1039/d0nr08768h
Nanoscale, Vol. 13, Issue 24 (June 2021) , p. 10829-10836  
Registro completo - Creative Commons
3.
15 p, 11.6 MB A tunable electronic beam splitter realized with crossed graphene nanoribbons / Brandimarte Mendonça, Pedro (Centro de Física de Materiales) ; Engelund, Mads (Centro de Física de Materiales) ; Papior, Nick (Institut Català de Nanociència i Nanotecnologia) ; Garcia-Lekue, Aran (Basque Foundation for Science) ; Frederiksen, Thomas (Basque Foundation for Science) ; Sanchez-Portal, Daniel (Donostia International Physics Center)
Graphene nanoribbons (GNRs) are promising components in future nanoelectronics due to the large mobility of graphene electrons and their tunable electronic band gap in combination with recent experimental developments of on-surface chemistry strategies for their growth. [...]
2017 - 10.1063/1.4974895
Journal of chemical physics, Vol. 146, Issue 9 (March 2017) , art. 92318  
Registro completo - Creative Commons
4.
10 p, 816.7 KB Ligand-mediated band engineering in bottom-up assembled SnTe nanocomposites for thermoelectric energy conversion / Ibáñez, Maria (EMPA-Swiss Federal Laboratories for Materials Science and Technology) ; Hasler, Roger (Empa-Swiss Federal Laboratories for Materials Science and Technology) ; Genç, Aziz (Institut Català de Nanociència i Nanotecnologia) ; Liu, Yu (Institute of Science and Technology Austria) ; Kuster, Beatrice (Empa-Swiss Federal Laboratories for Materials Science and Technology) ; Schuster, Maximilian (ETH Zürich. Department of Chemistry and Applied Biosciences) ; Dobrozhan, Oleksandr (Institut de Recerca en Energia de Catalunya) ; Cadavid, Doris (Institut de Recerca en Energia de Catalunya) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Cabot, Andreu (Institut de Recerca en Energia de Catalunya) ; Kovalenko, Maksym V. (ETH Zürich. Department of Chemistry and Applied Biosciences)
The bottom-up assembly of colloidal nanocrystals is a versatile methodology to produce composite nanomaterials with precisely tuned electronic properties. Beyond the synthetic control over crystal domain size, shape, crystal phase, and composition, solution-processed nanocrystals allow exquisite surface engineering. [...]
2019 - 10.1021/jacs.9b01394
Journal of the American Chemical Society, Vol. 141, Issue 20 (May 2019) , p. 8025-8029  
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5.
12 p, 755.5 KB Spin transport in dangling-bond wires on doped H-passivated Si(100) / Kepenekian, Mikaël (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Lorente, Nicolás (Institut Català de Nanociència i Nanotecnologia)
New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. [...]
2014 - 10.1088/0957-4484/25/46/465703
Nanotechnology, Vol. 25, Issue 46 (November 2014) , art. 465703  
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6.
15 p, 9.5 MB Addressing the Environment Electrostatic Effect on Ballistic Electron Transport in Large Systems : A QM/MM-NEGF Approach / Feliciano, Gustavo T. (Universidade Estadual Paulista (Brasil)) ; Sanz Navarro, Carlos (Institut Català de Nanociència i Nanotecnologia) ; Coutinho-Neto, Mauricio Domingues (Universidade Federal do ABC (Brasil)) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Scheicher, Ralph H. (Uppsala University) ; Reily Rocha, Alexandre (Universidade Estadual Paulista (Brasil))
The effects of the environment in nanoscopic materials can play a crucial role in device design. Particularly in biosensors, where the system is usually embedded in a solution, water and ions have to be taken into consideration in atomistic simulations of electronic transport for a realistic description of the system. [...]
2018 - 10.1021/acs.jpcb.7b03475
Journal of physical chemistry B, Vol. 122, Núm. 2 (January 2018) , p. 485-492  
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7.
4 p, 232.3 KB Effects of high-field electrical stress on the conduction properties of ultra-thin La2O3 films / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Molina, J. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Kim, Y. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Iwai, H. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; American Physical Society
Electron transport in high-field stressed metal-insulator-silicon devices with ultrathin (<5nm) lanthanum oxide layers is investigated. We show that the leakage current flowing through the structure prior to degradation is direct and Fowler-Nordheimtunneling conduction, while that after stress exhibits diode-like behavior with series and parallel resistances. [...]
2005 - 10.1063/1.1944890
Applied physics letters, Vol. 86, Issue 23 (June 2005) , p. 232104/1-232104/3  
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8.
4 p, 339.1 KB Bohm trajectories for the Monte Carlo simulation of quantum-based devices / Oriols, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; García García, Juan José (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; González, T. (Universidad de Salamanca. Departamento de Física Aplicada) ; Mateos, J. (Universidad de Salamanca. Departamento de Física Aplicada) ; Pardo, D. (Universidad de Salamanca. Departamento de Física Aplicada) ; American Physical Society
A generalization of the classical ensemble Monte Carlo(MC) device simulation technique is proposed to simultaneously deal with quantum-mechanical phase-coherence effects and scattering interactions in quantum-based devices. [...]
1998 - 10.1063/1.120899
Applied physics letters, Vol. 72, Issue 7 (February 1998) , p. 806-808  
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9.
4 p, 315.4 KB Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Falbo, P. (University of Calabria. Dipartimento di Elettronica Informatica e Sistemistica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Crupi, F. (University of Calabria. Dipartimento di Elettronica Informatica e Sistemistica) ; American Physical Society
A microscopic picture for the progressive leakage current growth in electrically stressed HfxSi1−xON/SiON gate stacks in metal-oxide-semiconductor transistors based on the physics of mesoscopic conductors is proposed. [...]
2008 - 10.1063/1.2949748
Applied physics letters, Vol. 92, Issue 25 (June 2008) , p. 253505/1-253505/3  
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