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20 p, 4.7 MB |
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition
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Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Pazos, Sebastián Matías (Consejo Nacional de Investigaciones Científicas y Técnicas) ;
Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We investigate the use and performance of the quasi-static memdiode model (QMM) when incorporated into large cross-point arrays intended for pattern classification tasks. Following Chua's memristive devices theory, the QMM comprises two equations, one equation for the electron transport based on the double-diode circuit with single series resistance and a second equation for the internal memory state of the device based on the so-called logistic hysteron or memory map. [...]
2020 -  10.1109/ACCESS.2020.3035638
IEEE Access, Vol. 8 (November 2020) , p. 202174-202193
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5 p, 2.8 MB |
Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models
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Miranda, Enrique (Universitat Autònoma de Barcelona) ;
Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona) ;
Salvador, E. (Universitat Autònoma de Barcelona) ;
Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona) ;
Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona)
The application of constant electrical stress to a metal-insulator-semiconductor (MOS) or metal-insulator-metal (MIM) structure can generate multiple breakdown events in the dielectric film. Very often, these events are detected as small jumps in the current-time characteristic of the device under test and can be treated from the stochastic viewpoint as a counting process. [...]
2023 - 10.1016/j.sse.2023.108812
Solid-state electronics, Vol. 210 (December 2023) , art. 108812
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12 p, 1.4 MB |
Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard
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Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona) ;
Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The ballistic conduction through narrow constrictions connecting charge reservoirs exhibits conductance quantization effects. Since the quantum of conductance (Formula presented. ) is only related to fundamental constants of nature, these effects might allow the implementation of a standard of resistance, fulfilling the requirements of the 2019 revised International System of Units. [...]
2023 - 10.1002/qute.202300048
Advanced Quantum Technologies, Vol. 6, Issue 7 (July 2023) , art. 2300048
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14 p, 7.1 MB |
Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks
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Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Piros, Eszter (Technische Universität Darmstadt) ;
Kaiser, Nico (Technische Universität Darmstadt) ;
Vogel, Tobias (Technische Universität Darmstadt) ;
Petzold, Stephan (Technische Universität Darmstadt) ;
Gehrunger, Jonas (Technische Universität Darmstadt) ;
Oster, Timo (Technische Universität Darmstadt) ;
Hochberger, Christian (Technische Universität Darmstadt) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Alff, Lambert (Technische Universität Darmstadt) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this paper, the use of Artificial Neural Networks (ANNs) in the form of Convolutional Neural Networks (AlexNET) for the fast and energy-efficient fitting of the Dynamic Memdiode Model (DMM) to the conduction characteristics of bipolar-type resistive switching (RS) devices is investigated. [...]
2022 - 10.3390/mi13112002
Micromachines, Vol. 13, Issue 11 (November 2022) , art 2002
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46 p, 10.4 MB |
On the Thermal Models for Resistive Random Access Memory Circuit Simulation
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Roldán, Juan B. (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ;
González-Cordero, Gerardo (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ;
Picos, Rodrigo (University of Balearic Islands. Industrial Engineering and Construction Department) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ;
Jiménez-Molinos, Francisco (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ;
Moreno Pérez, Enrique (Université Jean Monnet) ;
Maldonado, David (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ;
Baldomá, Santiago B. (Universidad Tecnológica Nacional. Unidad de Investigación y Desarrollo de las Ingenierías) ;
Moner Al Chawa, Mohamad (Technische Universität Dresden. Institute of Circuits and Systems) ;
de Benito, Carol (University of Balearic Islands. Industrial Engineering and Construction Department) ;
Stavrinides, Stavros G. (International Hellenic University) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Chua, Leon O. (University of California. Electrical Engineering and Computer Science Department)
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware cryptography. [...]
2021 - 10.3390/nano11051261
Nanomaterials, Vol. 11, Issue 5 (May 2021) , art. 1261
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11 p, 5.7 MB |
Investigation on the conductive filament growth dynamics in resistive switching memory via a Universal Monte Carlo Simulator
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Li, Yu (Chinese Academy of Sciences. Institute of Microelectronics (Beijing, Xina)) ;
Zhang, Meiyun (Jiangsu National Synergetic Innovation Center for Advanced Materials) ;
Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing, Xina)) ;
Teng, Jiao (University of Science and Technology (Beijing, Xina)) ;
Liu, Qi (Jiangsu National Synergetic Innovation Center for Advanced Materials) ;
Lv, Hangbing (Jiangsu National Synergetic Innovation Center for Advanced Materials) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Liu, Ming (Jiangsu National Synergetic Innovation Center for Advanced Materials)
In resistive random access memories, modeling conductive filament growing dynamics is important to understand the switching mechanism and variability. In this paper, a universal Monte Carlo simulator is developed based on a cell switching model and a tunneling-based transport model. [...]
2017 - 10.1038/s41598-017-11165-5
Scientific reports, Vol. 7 (Sep. 2017) , art. 11204
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24 p, 21.3 MB |
Assessment and improvement of the pattern recognition performance of memdiode-based cross-point arrays with randomly distributed stuck-at-faults
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Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Pazos, Sebastián M. (Consejo Nacional de Investigaciones Científicas y Técnicas) ;
Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ;
Morell Pérez, Antoni (Universitat Autònoma de Barcelona. Departament de Telecomunicació i Enginyeria de Sistemes) ;
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the effect of randomly distributed stuck-at faults (SAFs) in memristive crosspoint array (CPA)-based single and multi-layer perceptrons (SLPs and MLPs, respectively) intended for pattern recognition tasks is investigated by means of realistic SPICE simulations. [...]
2021 - 10.3390/electronics10192427
Electronics, Vol. 10, Issue 19 (October 2021) , art. 2427
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5 p, 2.8 MB |
A simple, robust, and accurate compact model for a wide variety of complementary resistive switching devices
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Saludes-Tapia, Mercedes (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona) ;
Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Complementary Resistive Switching (CRS) using memristive devices has been intensively investigated in the last decade. The objective of CRS is to generate low and high resistance windows in the I-V characteristic of the selector device with the aim of reducing the sneak-path conduction problem in crossbar arrays. [...]
2021 - 10.1016/j.sse.2021.108083
Solid-state electronics, Vol. 185 (November 2021) , art. 108083
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