Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates : an in-situ analysis by nanocalorimetry
Molina Ruiz, Manel (Universitat Autònoma de Barcelona. Departament de Física)
Lopeandía Fernández, Aitor (Universitat Autònoma de Barcelona. Departament de Física)
González Silveira, Marta (Universitat Autònoma de Barcelona. Departament de Física)
Anahory, Y. (Université de Montréal)
Guihard, M. (Université de Montréal)
García, Gemma (Universitat Autònoma de Barcelona. Departament de Física)
Clavaguera-Mora, M. T. (Universitat Autònoma de Barcelona. Departament de Física)
Schiettekatte, F. (Université de Montréal)
Rodríguez-Viejo, Javier (Universitat Autònoma de Barcelona. Departament de Física)
American Institute of Physics

Data:	2013
Resum:	The kinetics of intermediate phase formation between ultrathin films of Pd (12 nm) and single-crystalline Si (100) is monitored by in-situ nanocalorimetry at ultrafast heating rates. The heat capacity curves show an exothermic peak related to the formation of Pd2Si. A kinetic model which goes beyond the conventional linear-parabolic growth to consider independent nucleation and lateral growth of Pd2Si along the interface and vertical growth mechanisms is developed to fit the calorimetric curves. The model is used to extract the effective interfacial nucleation/growth and diffusion coefficients at the unusually high temperatures of silicide formation achieved at very fast heating rates.
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Differential scanning calorimeters ; Nucleation ; Reaction kinetics modeling ; Thin film growth
Publicat a:	Applied physics letters, Vol. 102, Issue 14 (April 2013) , p. 143111/1-143111/4, ISSN 1077-3118

DOI: 10.1063/1.4800934

5 p, 1.9 MB

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