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Density control on self-assembling of Ge islands using carbon-alloyed strained SiGe layers
Bernardi, Alessandro (Institut de Ciència de Materials de Barcelona)
Alonso Carmona, Maria Isabel (Institut de Ciència de Materials de Barcelona)
Goñi, Alejandro (Institut de Ciència de Materials de Barcelona)
Ossó Torné, J. Oriol (Institut de Ciència de Materials de Barcelona)
Garriga i Bacardi, Miquel (Institut de Ciència de Materials de Barcelona)
American Physical Society

Fecha: 2006
Resumen: The authors show that by deposition of 0. 1 ML of carbon prior to the self-assembledgrowth of Gequantum dots on a strained Si1−xGexbuffer layer a striking decrease in dot density by two orders of magnitude from about 1011to109cm−2 occurs when the Ge content of the buffer layer increases from 0% to 64%. Their results give experimental evidence for a kinetically limited growth mechanism in which Ge adatom mobility is determined by chemical interactions among C, Si, and Ge. Thus, by adjusting the Ge content of the SiGe buffer layer onto which a carbonsubmonolayer is deposited they are able to fine tune the density of the carbon-induced Gequantum dots.
Derechos: Tots els drets reservats.
Lengua: Anglès.
Documento: article ; recerca ; publishedVersion
Materia: Germanium ; Buffer layers ; Elemental semiconductors ; Carbon ; Quantum dots ; Nucleation ; Self assembly ; Chemical interdiffusion ; Monolayers ; Epitaxy ; Paraules clau fora catàleg
Publicado en: Applied physics letters, Vol. 89, Issue 10 (September 2006) , p. 101921/1-101921/3, ISSN 1077-3118

DOI: 10.1063/1.2349317

4 p, 383.6 KB

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