Current Status and Opportunities of Organic Thin-Film Transistor Technologies
Guo, Xiaojun (Shanghai Jiao Tong University)
Xu, Yong (Dongguk University (Seül))
Ogier, Simon (NeuDrive Limited)
Nga Ng, Tse (University of California)
Caironi, Mario (Center for Nano Science and Technology@PoliMi (Milà, Itàlia))
Perinot, Andrea (Center for Nano Science and Technology@PoliMi (Milà, Itàlia))
Li, Ling (Chinese Academy of Sciences)
Zhao, Jiaqing (Shanghai Jiao Tong University)
Tang, Wei (Shanghai Jiao Tong University)
Sporea, Radu A. (University of Surrey)
Nejim, Ahmed (Silvaco Europe Ltd)
Carrabina Bordoll, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics)
Cain, Paul (FlexEnable Ltd.)
Yan, Feng (The Hong Kong Polytechnic University)

Data:	2017
Resum:	Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper providesa comprehensive reviewof the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed.
Nota:	Ajudes: National Key Research and Development Program of "Strategic Advanced Electronic Materials" under Grant 2016YFB0401100 and in part by the NSFC of China under Grant 61274083 and Grant 61334008.
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Displays ; Flexible electronics ; Hybrid integration ; Organic thin-film transistor (OTFT) ; Printed electronics ; Sensors
Publicat a:	IEEE transactions on electron devices, Vol. 64, Num. 5 (2017) , p. 1906-1921, ISSN 1557-9646

DOI: 10.1109/TED.2017.2677086

Post-print 16 p, 2.3 MB

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