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Nanomechanical switches based on metal-insulator-metal capacitors from a standard complementary-metal-oxide semiconductor technology
Muñoz Gamarra, Jose Luis (Universitat Autònoma de Barcelona. Departament de Enginyeria Electrònica)
Uranga del Monte, Aránzazu (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Fecha: 2014
Resumen: We report experimental demonstrations of contact-mode nano-electromechanical switches obtained using a capacitor module based on metal-insulator-metal configuration of a standard commercial complementary metal oxide semiconductor technology. The developed 2 terminals Titanium Nitride switches operate at low voltages (10 V) thanks to its small gap (27 nm), showing an excellent ION/IOFF ratio (104) and abrupt behavior (5 mV/decade, one decade of current change is achieved with a 5 mV voltage variation). A switch configuration is also presented where using two electrodes three different contact mode states can be obtained, adding functionalities to mechanical switches configurations.
Derechos: Tots els drets reservats.
Lengua: Anglès.
Documento: article ; recerca ; publishedVersion
Publicado en: Applied physics letters, Vol. 104, Issue 24 (June 2014) , p. 243105-1/243105-5, ISSN 1077-3118

DOI: 10.1063/1.4882918


6 p, 1.7 MB

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