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Página principal > Artículos > Artículos publicados > NH₃ molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations |
Fecha: | 2012 |
Resumen: | The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). We show that molecular-based ex-situ doping, where NH₃ is adsorbed at the sidewall of the SiNW, can be an alternative path to n-type doping. By means of first-principle electronic structure calculations, we show that NH₃ is a shallow donor regardless of the growth orientation of the SiNWs. Also, we discuss quantum confinement and its relation with the depth of the NH₃ doping state, showing that the widening of the bandgap makes the molecular donor level deeper, thus more difficult to activate. |
Ayudas: | Ministerio de Ciencia e Innovación TEC2009-06986 Ministerio de Economía y Competitividad FIS2009-12721-C04-03 Ministerio de Ciencia e Innovación CSD2007-00041 |
Derechos: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
Lengua: | Anglès |
Documento: | Article ; recerca ; Versió publicada |
Materia: | Silicon nanowires ; Ammonia ; Molecular doping ; DFT ; Electronic properties ; Gas sensing |
Publicado en: | Nanoscale Research Letters, Vol. 7 (June 2012) , art. 308, ISSN 1931-7573 |
7 p, 4.4 MB |